A memory effect in anti-ferroelectric materials discovered

Initial studies of anti-ferroelectric materials in the Applied Materials Laboratory at the University of Portsmouth indicate that these polar dielectrics can store digital information. The experimental results are very encouraging and an article is in preparation. Dr Vopson and Prof. Tan from Iowa State University, are currently working on the proposal of a novel anti-ferroelectric random access memory chip (AFRAM) that will compete with traditional ferroelectric random access memory (FRAM) to deliver twice the memory storage capacity in the same volume.